IQDH29NE2LM5CGSCATMA1 vs IQD016N08NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH29NE2LM5CGSCATMA1 sa pamamagitan ng Infineon at IQD016N08NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon
IQDH29NE2LM5CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH29NE2LM5CGSCATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 Power-MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (Ta) | 75 A | 31 A |
| Continuous Drain Current (Tc) | 789 A | 323 A |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Packhaging | PG-WHTFN-9-U02 (WHTFN EP) | PG-TSON-8-9 (PQFN 5x6) |
| Bilang ng Pin | 9 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction, standard MOSFET rating) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |