IQDH29NE2LM5CGSCATMA1 vs IQD016N08NM5ATMA1 比較
詳細並排比較 IQDH29NE2LM5CGSCATMA1 由 Infineon 與 IQD016N08NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQDH29NE2LM5CGSCATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 Power-MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (Ta) | 75 A | 31 A |
| Continuous Drain Current (Tc) | 789 A | 323 A |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| 封裝 | PG-WHTFN-9-U02 (WHTFN EP) | PG-TSON-8-9 (PQFN 5x6) |
| 腳位數 | 9 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| 工作溫度範圍 | — | -55C to +150C (junction, standard MOSFET rating) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |