IQDH29NE2LM5CGSCATMA1 vs IQD016N08NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IQDH29NE2LM5CGSCATMA1 dari Infineon dan IQD016N08NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQDH29NE2LM5CGSCATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 Power-MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (Ta) | 75 A | 31 A |
| Continuous Drain Current (Tc) | 789 A | 323 A |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Paket | PG-WHTFN-9-U02 (WHTFN EP) | PG-TSON-8-9 (PQFN 5x6) |
| Jumlah Pin | 9 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| Rentang Suhu Kerja | — | -55C to +150C (junction, standard MOSFET rating) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |