IR2114SSPBF vs 2ED2106S06FXUMA1 比較

詳細並排比較 IR2114SSPBF 由 Infineon 與 2ED2106S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 啟用中

規格比較

參數 IR2114SSPBF 2ED2106S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-bridge gate driver High-Side and Low-Side (Half-Bridge)
輸出數量 2 (high-side + low-side) 2 (1 high-side, 1 low-side)
拓撲 Non-inverting —
Offset (high-side) Voltage (max) 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Logic Supply (VDD) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 25 V (with respect to VS) —
Source Current (typ.) 2 A 0.29 A
Sink Current (typ.) 3 A 0.7 A
Rise / Fall Time (typ.) [DATA_NEEDED: rise/fall time] —
Propagation Delay (typ.) 50 ns 100 ns
Input Logic Compatibility 3.3 V / 5 V CMOS/LSTTL CMOS, TTL
UVLO Thresholds VCC and VBS, internally set —
Integrated Bootstrap Diode Yes —
Over-Current Shutdown Yes (programmable, with FAULT output) —
工作溫度 -40 C to +125 C —
封裝 24-SSOP (7.80 mm wide, 1.75 mm height) PG-DSO-8-69 (DSO-8)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
Offset Voltage (Voffset max) — 650 V
Number of Drivers — 2
腳位數 — 8
Bootstrap Diode — Integrated
工作溫度範圍 — -40C to +125C
Packaging — Tape & Reel
輸出類型 — Half-Bridge, Non-Inverting

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