IRFB7545PBF vs IRL2910STRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7545PBF disebabkan oleh Infineon dan IRL2910STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB7545PBF | IRL2910STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7545PBF | — |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | HEXFET (Infineon/IR) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current] |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-220AB (Through-Hole) | D2PAK (TO-263) Surface Mount |
| Jenis Pemasangan | Through Hole (THT) | Surface Mount |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | — |
| Aras MSL | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 55 A |
| On-Resistance Rds(on) max @ VGS=10V | — | 26 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | Logic-level (1V-2V) |
| Total Gate Charge (Qg) | — | 93.3 nC |
| Power Dissipation @ TA=25C | — | 3.8 W |
| Power Dissipation @ TC=25C | — | 200 W |
| Gambaran Suhu Operasi | — | -55C to +175C (TJ) |
| Status RoHS | — | Compliant |
| Boson Bebas | — | Compliant (per GlobalSpec) |