IRFB7545PBF vs IRL2910STRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB7545PBF sa pamamagitan ng Infineon at IRL2910STRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB7545PBF IRL2910STRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) HEXFET (Infineon/IR)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-220AB (Through-Hole) D2PAK (TO-263) Surface Mount
Uri ng Pagpapasok Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
Level ng MSL N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 55 A
On-Resistance Rds(on) max @ VGS=10V — 26 mOhm
Gate Threshold Voltage VGS(th) typ — Logic-level (1V-2V)
Total Gate Charge (Qg) — 93.3 nC
Power Dissipation @ TA=25C — 3.8 W
Power Dissipation @ TC=25C — 200 W
Hanay ng Temperature na Operasyon — -55C to +175C (TJ)
Tindminan RoHS — Compliant
Wala sa Halogen — Compliant (per GlobalSpec)

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