IRFB7545PBF vs IRL2910STRLPBF Perbandingan
Perbandingan bersamaan detil IRFB7545PBF dari Infineon dan IRL2910STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFB7545PBF | IRL2910STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7545PBF | — |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | HEXFET (Infineon/IR) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current] |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | TO-220AB (Through-Hole) | D2PAK (TO-263) Surface Mount |
| Tipe Mounting | Through Hole (THT) | Surface Mount |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | — |
| Level MSL | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 55 A |
| On-Resistance Rds(on) max @ VGS=10V | — | 26 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | Logic-level (1V-2V) |
| Total Gate Charge (Qg) | — | 93.3 nC |
| Power Dissipation @ TA=25C | — | 3.8 W |
| Power Dissipation @ TC=25C | — | 200 W |
| Rentang Suhu Kerja | — | -55C to +175C (TJ) |
| Status RoHS | — | Compliant |
| Bebas Halogen | — | Compliant (per GlobalSpec) |