IRFR3806TRPBF vs IRFR2405TRPBF Comparison

Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFR2405TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3806TRPBF IRFR2405TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC 70 nC
Power Dissipation (Pd) at Tc = 25 C 71 W —
Package / Case TO-252AA (DPAK) —
Mounting Type Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Operating Temperature Range -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) Yes (100% avalanche tested)
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Operating Junction Temperature — -55C to +175C
Package — TO-252AA (DPAK)
Pin Count — 3 (Gate, Drain, Source) + Tab
MSL Level — 1
RoHS Status — Compliant (Lead-Free PBF suffix)
Halogen Free — [DATA_NEEDED: halogen-free status]

Datasheets & Resources

Browse All Products Create BOM Request Quote