IRFR3806TRPBF vs IRFR2405TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3806TRPBF disebabkan oleh Infineon dan IRFR2405TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR3806TRPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC 70 nC
Power Dissipation (Pd) at Tc = 25 C 71 W —
Kemasan / Case TO-252AA (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Gambaran Suhu Operasi -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) Yes (100% avalanche tested)
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubungan Operasi — -55C to +175C
Kemasan — TO-252AA (DPAK)
Kiraan Pin — 3 (Gate, Drain, Source) + Tab
Aras MSL — 1
Status RoHS — Compliant (Lead-Free PBF suffix)
Boson Bebas — [DATA_NEEDED: halogen-free status]

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