IRFR3806TRPBF vs IRFR2405TRPBF Perbandingan

Perbandingan bersamaan detil IRFR3806TRPBF dari Infineon dan IRFR2405TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3806TRPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC 70 nC
Power Dissipation (Pd) at Tc = 25 C 71 W —
Paket / Case TO-252AA (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Rentang Suhu Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) Yes (100% avalanche tested)
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubung Kerja — -55C to +175C
Paket — TO-252AA (DPAK)
Jumlah Pin — 3 (Gate, Drain, Source) + Tab
Level MSL — 1
Status RoHS — Compliant (Lead-Free PBF suffix)
Bebas Halogen — [DATA_NEEDED: halogen-free status]

Spek dan Sumber

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