IRFR3806TRPBF vs IRFR2405TRPBF 比較
詳細並排比較 IRFR3806TRPBF 由 Infineon 與 IRFR2405TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3806TRPBF | IRFR2405TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | 55 V |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | 70 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| 封裝 / 外殼 | TO-252AA (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| 工作溫度範圍 | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | [DATA_NEEDED: VGS max rating] |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | Yes (100% avalanche tested) |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 工作接面溫度 | — | -55C to +175C |
| 封裝 | — | TO-252AA (DPAK) |
| 腳位數 | — | 3 (Gate, Drain, Source) + Tab |
| MSL 等級 | — | 1 |
| RoHS 狀態 | — | Compliant (Lead-Free PBF suffix) |
| 無鹵素 | — | [DATA_NEEDED: halogen-free status] |