IRLS3034TRLPBF - 40V 343A 1.7mΩ N-Channel HEXFET MOSFET | Infineon
MPN: IRLS3034TRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.33 | $2.33 |
| 10 | $2.18 | $21.80 |
| 100 | $1.95 | $195.00 |
| 500 | $1.72 | $860.00 |
| 1,000 | $1.55 | $1,550.00 |
Drop-in alternatives for IRLS3034TRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC027N10NS5ATMA1
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$1.1 / Unit
View Datasheet →IRLS3034TRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 195 A |
| Pulsed Drain Current (IDM) | 343 A |
| RDS(on) Max at VGS=10V, ID=195A | 1.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typical) |
| Total Gate Charge (Qg) | 108 nC |
| Power Dissipation (PD) at TC=25°C | 375 W |
| Operating Temperature Range | -40°C to +175°C (TJ) |
| Package | D2PAK (TO-263), Surface Mount |
| Mounting Type | Surface Mount |
| Technology | IR HEXFET (planar N-channel) |
| Lead-Free | Yes (PBF suffix) |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Shipping Format | Tape and Reel, 7-inch (TRL) |
IRLS3034TRLPBF Pin Configuration
| Pin 1 | GATE — Gate drive input; logic-level compatible (~2.5V threshold) |
| Pin 2 | DRAIN — Drain terminal (also connected to metal tab) |
| Pin 3 | SOURCE — Source terminal (also connected to metal tab) |
| Pin 4 | DRAIN (TAB) — Drain tab on package bottom; main thermal and current path |
Safe Operating Area (DC)
Typical Applications
IRLS3034TRLPBF is suitable for 7 applications: Secondary-Side Synchronous Rectification in SMPS, Brushed DC Motor Drive, Battery Management and Protection, Uninterruptible Power Supply (UPS) Output Stage, Hot-Swap and eFuse Controllers, Automotive 12V/24V Load Switching, Industrial Welding and Plasma Cutters.
Secondary-Side Synchronous Rectification in SMPS
The IRLS3034TRLPBF's 1.7 mΩ RDS(on) and 40V VDS rating make it ideal for secondary-side synchronous rectification in 12V and 24V switched-mode power supplies. With a continuous 195A rating and 343A pulsed capability, it can replace Schottky diodes in high-current PSU outputs with efficiency gains of 3-5% at full load. The 108 nC gate charge enables 200-500 kHz switching when driven by a dedicated synchronous rectifier controller like the IR1161, while the low RDS(on) reduces rectifier conduction loss to a fraction of equivalent Schottky solutions. Designers typically parallel two IRLS3034TRLPBF devices in D2PAK for 24V/30A server PSU outputs.
Recommended
Brushed DC Motor Drive
The IRLS3034TRLPBF serves as the low-side switching element in H-bridge brushed DC motor drives up to 40V/195A. Its 1.7 mΩ RDS(on) limits conduction loss during PWM duty cycles, keeping FET dissipation below 20W at 100A continuous. The 375W power dissipation capability absorbs regenerative braking energy when the motor acts as a generator, while the avalanche-rated HEXFET structure tolerates the inductive kickback. Pair with an IRS2302STRPBF half-bridge driver and bootstrap capacitors for switching above 20 kHz, or use a discrete gate-driver IC for sub-1 kHz PWM at very high currents.
Recommended
Battery Management and Protection
The IRLS3034TRLPBF's 40V VDS and 195A continuous current make it a strong candidate for high-current battery disconnect switches and pack-protection FETs in 4-8s Li-ion battery management systems (BMS). Its 1.7 mΩ RDS(on) minimizes voltage drop during 100A discharge pulses, preserving usable pack capacity. The HEXFET avalanche rating ensures the device can absorb inductive transients from battery cabling without external TVS protection. In typical 36V e-mobility BMS designs, the IRLS3034TRLPBF replaces multiple paralleled smaller MOSFETs, reducing PCB area and BOM cost.
Recommended
Uninterruptible Power Supply (UPS) Output Stage
In online UPS topologies the IRLS3034TRLPBF is used as the bypass or inverter switching element on the 24V/48V DC bus. Its 1.7 mΩ RDS(on) reduces inverter-stage losses during AC-to-AC conversion, while the 375W continuous dissipation handles sustained 195A loads during battery-bridge operation. The device's low thermal resistance and D2PAK copper-pad layout support fanless operation in 1-2 kVA UPS designs. Multiple IRLS3034TRLPBF devices are commonly paralleled for higher-power 5 kVA units, where the part's positive temperature coefficient of RDS(on) promotes natural current sharing.
Recommended
Hot-Swap and eFuse Controllers
The IRLS3034TRLPBF acts as the high-current pass element in 12V/24V hot-swap controllers and electronic fuse (eFuse) designs. Its 1.7 mΩ RDS(on) keeps insertion loss under 50 mV at 30A, while its 195A continuous rating handles inrush transients during bulk-capacitor charging. Combined with a hot-swap controller like the ITS724GFUMA1 or BTS4142NHUMA1, it provides programmable current limiting, fault indication, and reverse-current blocking. This combination is widely deployed in telecom 24V feed distribution and server 12V backplane hot-swap applications.
Recommended
Automotive 12V/24V Load Switching
The IRLS3034TRLPBF is well suited for direct load switching in 12V and 24V automotive electrical systems, where it can drive solenoids, pumps, and high-current lamps. Its 40V VDS rating covers 24V truck-bus transients up to the ISO 7637-2 load-dump envelope when paired with an external TVS clamp. The HEXFET technology's avalanche ruggedness is critical for withstanding the unclamped inductive kickback of automotive solenoids. For AEC-Q100-qualified applications, pair with the automotive-grade IPB70N10S3L12ATMA1 (100V) or other Infineon Auto-Q parts in the same D2PAK footprint.
Recommended
Industrial Welding and Plasma Cutters
In low-voltage welding inverters and plasma cutter power stages, the IRLS3034TRLPBF serves as the primary-side switching element on the 24V-40V DC bus. Its 1.7 mΩ RDS(on) and 343A pulsed current capability handle the high di/dt transients of inverter-grade switching at 50-100 kHz, while the 375W power dissipation rating absorbs momentary overloads during arc strikes. The device's avalanche rating also tolerates the arc-back events common in plasma cutting. Multiple parallel IRLS3034TRLPBF devices are used in commercial 200A welding inverter designs, with their positive tempco ensuring balanced current sharing.
Recommended
Recommended Products Summary
Engineering reference data for IRLS3034TRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLS3034PBF | IRFS7430 | IRL1404ZSPBF | IRFZ44NSTRLPBF | BSC027N10NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| VDS (V) | 40 V | 40 V | 40 V | 40 V | 55 V | 100 V |
| Continuous ID at TC=25°C (A) | 195 A | 195 A | 195 A | 200 A | 50 A | 100 A |
| RDS(on) Max at VGS=10V (mΩ) | 1.7 mΩ | 1.7 mΩ | 2.0 mΩ (+18%) | 1.5 mΩ (-12%) | 17.5 mΩ (+929%) | 2.7 mΩ (+59%) |
| Total Gate Charge Qg (nC) | 108 nC | 108 nC | 120 nC (+11%) | 90 nC (-17%) | 63 nC (-42%) | 85 nC (-21%) |
| Power Dissipation (W) | 375 W | 375 W | 375 W | 330 W (-12%) | 94 W (-75%) | 300 W (-20%) |
| Technology | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | OptiMOS 5 (trench) |
Key Differentiators
- Ultra-low 1.7 mΩ RDS(on) at 40V VDS (vs IRFZ44NSTRLPBF)
- Lower RDS(on) than IRFS7430 in same package (vs IRFS7430)
- Higher continuous current than 100V OptiMOS 5 (vs BSC027N10NS5ATMA1)
Design Notes
Estimated: At continuous 100A load with VGS=10V, RDS(on) of 1.7 mΩ produces 17W of conduction loss in the IRLS3034TRLPBF. With a D2PAK thermal resistance (RthJA) of approximately 40°C/W on 1 oz copper 1 sq-inch pad, junction temperature rises 680°C above ambient - which exceeds TJmax=175°C. Designers MUST either reduce continuous current below 50A on a 1 sq-inch pad, or grow copper area to 4+ sq-inches (RthJA ~10°C/W) to keep junction rise below 100°C at 100A. Forced airflow of 200 LFM reduces RthJA by another 30-40%.
The D2PAK drain tab is the primary thermal path. Use a minimum 1 sq-inch top-side copper pour for 50A continuous; expand to 4 sq-inches for 100A continuous. Apply 6+ thermal vias (0.3mm drill, 1mm pitch) under the tab to inner-layer copper spreads. Keep the gate-drive trace short (<20mm) and surround it with ground copper to minimize gate-loop inductance, which otherwise causes ringing and potential avalanche breakdown during turn-off transitions.
Critical: The IRLS3034TRLPBF's gate is sensitive to ESD and dv/dt-induced turn-on. Add a 10kΩ gate-to-source resistor to discharge the gate when the driver is in high-Z state, preventing accidental turn-on during power-up or fault recovery. Do not exceed VGS of ±20V absolute maximum - use a 12V zener from gate-to-source if driving from a higher-voltage rail. Also: do not parallel IRLS3034TRLPBF with significantly different RDS(on) parts without derating; HEXFET devices have positive tempco and self-balance, but mismatched parts can lead to unequal current sharing.
Compliance Information
PBF suffix denotes lead-free, RoHS-compliant termination. Per the Infineon product page and DigiKey listing the IRLS3034TRLPBF is RoHS compliant. Not AEC-Q100 qualified; for automotive applications requiring AEC-Q100, request the IR(S/A) auto-grade equivalent from Infineon or use IPB70N10S3L12ATMA1 from the same D2PAK family. Halogen-free status not explicitly stated in the provided data - set to unknown.
