IS43QR16512B-062AABL vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of IS43QR16512B-062AABL by ISSI, Integrated Silicon Solution Inc and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL β ActiveSpecification Comparison
| Parameter | IS43QR16512B-062AABL | H5AN8G6NDJR |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| CAS Latency | 22-22-22 | 22 cycles (at 3200 Mbps) |
| tRCD | 19 ns | β |
| Package | 96-TWBGA (7.5x13.5 mm) | 96-ball FBGA (13mm x 7.5mm) |
| Operating Temperature | 0Β°C to +95Β°C (case) | β |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | β |
| Number of Pins | 96 | β |
| Interface | POD (Pseudo Open Drain) | β |
| Clock Frequency | 1.6 GHz | β |
| Data Bus Width | 16 bit | β |
| Density | β | 8 Gb |
| Number of Terminals | β | 96 |
| Maximum Supply Voltage (Vsup) | β | 1.26 V |
| Maximum Operating Temperature | β | 85 Β°C |
| Burst Length | β | 8 (BL8), 4 (BC4) |
| Access Mode | β | Multi Bank Page Burst |
| JESD-30 Code | β | R-PBGA-B96 |
| Features | β | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |