IS43QR16512B-062AABL vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IS43QR16512B-062AABL disebabkan oleh ISSI, Integrated Silicon Solution Inc dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IS43QR16512B-062AABL | H5AN8G6NDJR |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kadar Data | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Latensi CAS | 22-22-22 | 22 cycles (at 3200 Mbps) |
| tRCD | 19 ns | — |
| Kemasan | 96-TWBGA (7.5x13.5 mm) | 96-ball FBGA (13mm x 7.5mm) |
| Suhu Operasi | 0°C to +95°C (case) | — |
| RoHS | Compliant | Compliant |
| Jenis Pemasangan | Surface Mount | — |
| Bilangan Pin | 96 | — |
| Antaramuka | POD (Pseudo Open Drain) | — |
| Clock Frequency | 1.6 GHz | — |
| Lebar Bus Data | 16 bit | — |
| Density | — | 8 Gb |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |