K4A8G085WB-BCTD vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (1G x 8) | β |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 3200 Mbps (PC4-25600) | 3200 Mbps (DDR4-3200) |
| Speed Bin | CL22-22-22 | β |
| Package | FBGA-78 (TFBGA) | 96-ball FBGA (13mm x 7.5mm) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | β |
| Burst Length | 8 (BL8) | 8 (BL8), 4 (BC4) |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| Data Mask Function | Yes | β |
| JESD-30 Code | R-PBGA-B78 | R-PBGA-B96 |
| Number of Terminals | 78 | 96 |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Maximum Supply Voltage (Vsup) | β | 1.26 V |
| Maximum Operating Temperature | β | 85 Β°C |
| CAS Latency | β | 22 cycles (at 3200 Mbps) |
| Access Mode | β | Multi Bank Page Burst |
| RoHS | β | Compliant |
| Features | β | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |