K4A8G085WB-BCTD vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Active
Specification Comparison
| Parameter | K4A8G085WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $8.53 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| Package | FBGA-78 (78-ball TFBGA) | 96-ball FBGA (13mm x 7.5mm) |
| Mounting Type | Surface Mount | — |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | 8 (BL8), 4 (BC4) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Features | ZQ calibration, CRC, CA parity, asynchronous reset | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| CAS Latency | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |