K4A8G085WB-BCTD vs H5AN8G6NDJR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCTD sa pamamagitan ng Samsung Electronics at H5AN8G6NDJR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $8.53 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 1G x 8 | 512M x 16 |
| Rate ng Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| Packhaging | FBGA-78 (78-ball TFBGA) | 96-ball FBGA (13mm x 7.5mm) |
| Uri ng Pagpapasok | Surface Mount | — |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | 8 (BL8), 4 (BC4) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Mga Karakteristika | ZQ calibration, CRC, CA parity, asynchronous reset | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Latensya ng CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |