K4A8G085WB-BCTD vs H5AN8G6NDJR Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BCTD dari Samsung Electronics dan H5AN8G6NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $8,53 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 512M x 16 |
| Laju Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| Paket | FBGA-78 (78-ball TFBGA) | 96-ball FBGA (13mm x 7.5mm) |
| Tipe Mounting | Surface Mount | — |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | 8 (BL8), 4 (BC4) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Fitur | ZQ calibration, CRC, CA parity, asynchronous reset | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |