K4A8G085WC-BIWE vs K4A8G085WC-BCWE Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and K4A8G085WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BIWE | K4A8G085WC-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $7.38 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 78-FBGA | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | POD-12 | DDR4 (parallel, double data rate) |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | Standard DDR4 refresh mechanisms |
| RoHS Status | Compliant | Compliant (per JLCPCB listing) |
| Lead-Free | Yes | — |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | 0C to +85C |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Bank Group Architecture | — | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| On-Die Termination | — | Yes (DDR4 ODT) |