K4A8G085WC-BIWE vs K4A8G085WC-BCWE Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and K4A8G085WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BIWE
K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
K4A8G085WC-BIWE β ActiveSamsung Electronics
K4A8G085WC-BCWE
K4A8G085WC-BCWE - 8Gb DDR4-3200 DRAM 1.2V | Samsung
K4A8G085WC-BCWE β ActiveSpecification Comparison
| Parameter | K4A8G085WC-BIWE | K4A8G085WC-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.29 | $0.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | β |
| Supply Voltage (VDDQ) | 1.2 V | β |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Package | 78-FBGA | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | POD-12 | DDR4 (parallel, double data rate) |
| Burst Length | 8 (BL8), 4 (BC4) | β |
| CAS Latency | 22 (CL22) | β |
| Refresh | Auto-refresh, self-refresh | Standard DDR4 refresh mechanisms |
| RoHS Status | Compliant | Compliant (per JLCPCB listing) |
| Lead-Free | Yes | β |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0C to +85C |
| Application Class | β | Computing / Embedded main memory |
| Manufacturer | β | Samsung Electronics |
| Bank Group Architecture | β | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | β | -BCWE (DDR4-3200, commercial temp) |
| On-Die Termination | β | Yes (DDR4 ODT) |