K4A8G085WC-BIWE vs K4A8G085WC-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BIWE disebabkan oleh Samsung Electronics dan K4A8G085WC-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BIWE | K4A8G085WC-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $7.38 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 78-FBGA | 78FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | POD-12 | DDR4 (parallel, double data rate) |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | Standard DDR4 refresh mechanisms |
| Status RoHS | Compliant | Compliant (per JLCPCB listing) |
| Lead-Free | Yes | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | 0C to +85C |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Bank Group Architecture | — | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| On-Die Termination | — | Yes (DDR4 ODT) |