K4A8G165WB-BCPB vs IS43TR16256AL-125KBL Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCPB disebabkan oleh Samsung Electronics dan IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G165WB-BCPB K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung

K4A8G165WB-BCPB ✓ Aktif
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G165WB-BCPB IS43TR16256AL-125KBL
Merek Samsung Electronics ISSI, Integrated Silicon Solution Inc
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM SDRAM - DDR3L
Density 8 Gb —
Organisasi 512M x 16 —
Kadar Data 2133 Mbps 1600 Mbps
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Suhu Operasi 0C to +85C 0°C ~ 95°C
Kemasan 96FBGA (TFBGA) 96-TWBGA (9x13mm)
Number of Terminals 96 96
Package Shape Rectangular, bottom terminal position —
Die Generation 8Gb B-die —
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka DDR4 (synchronous, double data rate) Parallel
Bank Groups DDR4 bank-group architecture —
Status RoHS Compliant (per Lisleapex listing) Compliant
Refresh [DATA_NEEDED: refresh specification] —
Saiz Ingatan — 4Gbit (256M x 16)
Clock Frequency — 800 MHz
Access Time — 20 ns
Tegangan Pemberi Arus — 1.35V (backward compatible to 1.5V)
Memory Format — DRAM
Technology — SDRAM - DDR3L
Lead-Free — Yes

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