K4A8G165WB-BCRC vs K4A8G165WB-BIWE Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WB-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Interface | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | — |
| Data Rate | 2400 Mbps/pin (DDR4-2400) | 3200 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Package | 96-ball FBGA (PBGA96) | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +95C | -40°C to +95°C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V |
| Burst Length | — | 8, 16 |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | Auto-refresh, Self-refresh |
| On-Die Termination | — | Yes |
| RoHS | — | Compliant |
| Number of Pins | — | 96 |