K4A8G165WB-BCRC vs K4A8G165WB-BIWE Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCRC dari Samsung Electronics dan K4A8G165WB-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCRC | K4A8G165WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antarmuka | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | — |
| Laju Data | 2400 Mbps/pin (DDR4-2400) | 3200 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Paket | 96-ball FBGA (PBGA96) | 96-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40C to +95C | -40°C to +95°C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Burst Length | — | 8, 16 |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | Auto-refresh, Self-refresh |
| On-Die Termination | — | Yes |
| RoHS | — | Compliant |
| Jumlah Pin | — | 96 |