K4A8G165WB-BCRC vs K4A8G165WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan K4A8G165WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | K4A8G165WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antaramuka | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | — |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | 3200 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Kemasan | 96-ball FBGA (PBGA96) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | -40°C to +95°C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Burst Length | — | 8, 16 |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | Auto-refresh, Self-refresh |
| On-Die Termination | — | Yes |
| RoHS | — | Compliant |
| Bilangan Pin | — | 96 |