K4A8G165WB-BCWE vs NT5AD512M16A4-GZ Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and NT5AD512M16A4-GZ by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCWE | NT5AD512M16A4-GZ |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $6.25 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps/pin | — |
| Supply Voltage | 1.2 V | 1.2V |
| Access Time | 19 ns | — |
| Interface | Parallel | — |
| Package | 96FBGA | TFBGA-96 |
| Operating Temperature | 0C to +85C | — |
| Mounting Type | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance statement] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Organization | — | 512M x 16 |
| Density | — | 8Gb |
| Maximum Clock Frequency | — | 1200 MHz |
| Data Bus Width | — | 16 bits |
| Number of Terminals | — | 96 |
| Interleaved Burst Length | — | 4, 8 |
| Access Mode | — | Four Bank Page Burst |
| Operating Temperature Range | — | Commercial and Industrial |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| CRC Function | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling Function | — | Yes |
| ZQ Calibration Function | — | Yes |