K4A8G165WB-BCWE vs NT5AD512M16A4-GZ Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and NT5AD512M16A4-GZ by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveNanya Technology
NT5AD512M16A4-GZ
NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
NT5AD512M16A4-GZ β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | NT5AD512M16A4-GZ |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $8.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | β |
| Supply Voltage | 1.2 V | 1.2V |
| Access Time (CAS Latency) | 19 ns | β |
| Interface | Parallel | β |
| Package | 96FBGA | TFBGA-96 |
| Mounting Type | Surface Mount | β |
| Operating Temperature | 0C to +85C | β |
| Burst Length | 8 | β |
| Bank Group Architecture | Yes | β |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | β |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | β |
| RoHS Status | Compliant | β |
| Lead Free | Yes | β |
| Maximum Clock Frequency | β | 1200 MHz |
| Data Bus Width | β | 16 bits |
| Number of Terminals | β | 96 |
| Interleaved Burst Length | β | 4, 8 |
| Access Mode | β | Four Bank Page Burst |
| Operating Temperature Range | β | Commercial and Industrial |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Built-in Temperature Sensor | β | Yes |
| CRC Function | β | Yes |
| Data Mask Function | β | Yes |
| Write Leveling Function | β | Yes |
| ZQ Calibration Function | β | Yes |