K4A8G165WB-BCWE vs NT5AD512M16A4-GZ 比較
詳細並排比較 K4A8G165WB-BCWE 由 Samsung Electronics 與 NT5AD512M16A4-GZ 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCWE | NT5AD512M16A4-GZ |
|---|---|---|
| 品牌 | Samsung Electronics | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $6.25 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| 資料速率 | 3200 Mbps/pin | — |
| 供應電壓 | 1.2 V | 1.2V |
| Access Time | 19 ns | — |
| 介面 | Parallel | — |
| 封裝 | 96FBGA | TFBGA-96 |
| 工作溫度 | 0C to +85C | — |
| 安裝類型 | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance statement] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 組織 | — | 512M x 16 |
| Density | — | 8Gb |
| 最大時脈頻率 | — | 1200 MHz |
| 資料匯流排寬度 | — | 16 bits |
| Number of Terminals | — | 96 |
| Interleaved Burst Length | — | 4, 8 |
| Access Mode | — | Four Bank Page Burst |
| 工作溫度範圍 | — | Commercial and Industrial |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| CRC Function | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling Function | — | Yes |
| ZQ Calibration Function | — | Yes |