K4A8G165WB-BCWE vs NT5AD512M16A4-GZ Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCWE dari Samsung Electronics dan NT5AD512M16A4-GZ dari Nanya Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCWE | NT5AD512M16A4-GZ |
|---|---|---|
| Merek | Samsung Electronics | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6,25 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | 3200 Mbps/pin | — |
| Tegangan Pemuat | 1.2 V | 1.2V |
| Access Time | 19 ns | — |
| Antarmuka | Parallel | — |
| Paket | 96FBGA | TFBGA-96 |
| Suhu Kerja | 0C to +85C | — |
| Tipe Mounting | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Organisasi | — | 512M x 16 |
| Density | — | 8Gb |
| Frekuensi Bawah Maximum | — | 1200 MHz |
| Lebar Bus Data | — | 16 bits |
| Number of Terminals | — | 96 |
| Interleaved Burst Length | — | 4, 8 |
| Access Mode | — | Four Bank Page Burst |
| Rentang Suhu Kerja | — | Commercial and Industrial |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| CRC Function | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling Function | — | Yes |
| ZQ Calibration Function | — | Yes |