K4A8G165WB-BIWE vs MT40A1G8WE-075E Comparison
Detailed side-by-side comparison of K4A8G165WB-BIWE by Samsung Electronics and MT40A1G8WE-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIWE
K4A8G165WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G165WB-BIWE β ActiveMicron Technology
MT40A1G8WE-075E
MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8WE-075E β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIWE | MT40A1G8WE-075E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.22 | $11.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | 2666 MT/s (1.33 GHz) |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | -40Β°C to +95Β°C | β |
| Package | 96-ball FBGA | 78-ball FBGA (8x12mm) |
| Interface | Parallel | β |
| Burst Length | 8, 16 | 8 and 4 |
| CAS Latency | [DATA_NEEDED: CAS Latency] | Programmable |
| Refresh | Auto-refresh, Self-refresh | β |
| On-Die Termination | Yes | β |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 96 | β |
| Memory Size | β | 8 Gbit (1G x 8) |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Supply | β | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | β | -40Β°C to +105Β°C (industrial) |
| Refresh Time (8192 cycles) | β | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C |
| I/O Type | β | 1.2V pseudo-open-drain |
| VREFDQ | β | On-die, internal, adjustable |
| RoHS Status | β | Compliant |
| AEC-Q100 | β | Optional (AIT variant) |