K4B4G1646D-BCK0 vs AS4C256M16D3L-12BCN Comparison
Detailed side-by-side comparison of K4B4G1646D-BCK0 by Samsung Electronics and AS4C256M16D3L-12BCN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
AS4C256M16D3L-12BCN ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCK0 | AS4C256M16D3L-12BCN |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Data Rate | 1600 Mbps per pin | 1600 Mbps |
| Clock Frequency | 800 MHz | — |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| CAS Latency | 11 (programmable) | 20 ns |
| Burst Length | 8, 4 | — |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (9x13 mm) |
| Operating Temperature | 0°C to 95°C (Tc) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Memory Size | — | 4 Gbit |
| Data Bus Width | — | 16 bit |
| Maximum Clock Frequency | — | 800 MHz |
| Supply Voltage | — | 1.35 V |
| Mounting Style | — | SMD/SMT |
| Operating Temperature Range | — | 0C to +95C (Tc) |
| Halogen Free | — | Yes |
| Interface Type | — | Parallel |
| Number of Pins | — | 96 |