K4B4G1646E-BYK0 vs K4B4G1646E-BCMA Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK0 by Samsung Electronics and K4B4G1646E-BCMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK0
K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK0 β ActiveSamsung Electronics
K4B4G1646E-BCMA
K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
K4B4G1646E-BCMA β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYK0 | K4B4G1646E-BCMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $3.24 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.425 V to 1.575 V (1.5 V nominal) |
| Data Rate | DDR3-1600 (800 MHz) | β |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | FBGA-96 (7.5 x 13.3 mm) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C |
| CAS Latency | 11 (CL-tRCD-tRP) | β |
| Burst Length | 8 (fixed), 4 (burst chop) | β |
| On-Die Termination | Yes (dynamic ODT) | β |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | β |
| Asynchronous Reset | Yes | Yes |
| Data Mask | Yes | β |
| RoHS | Compliant | β |
| Clock / Data Rate | β | 1066 MHz / 1066 Mbps per data pin |
| Operating Supply Current (IDD) | β | 55 mA |
| Standby Current | β | 2 mA |
| On-Die Termination (ODT) | β | Dynamic ODT supported |
| Data Mask Function | β | Yes |
| Mounting Type | β | Surface Mount (BGA) |
| RoHS Status | β | Compliant |