K4B4G1646E-BYK0 vs K4B4G1646E-BCMA Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BYK0 dari Samsung Electronics dan K4B4G1646E-BCMA dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
K4B4G1646E-BCMA ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BYK0 | K4B4G1646E-BCMA |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $3,77 |
| Tipe Memori | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemuat | 1.35 V (1.283 V to 1.45 V) | 1.425 V to 1.575 V (1.5 V nominal) |
| Laju Data | DDR3-1600 (800 MHz) | — |
| Paket | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | FBGA-96 (7.5 x 13.3 mm) |
| Suhu Kerja | 0°C to +95°C (TC) | 0C to +95C |
| Latensi CAS | 11 (CL-tRCD-tRP) | — |
| Burst Length | 8 (fixed), 4 (burst chop) | — |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | Yes |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Clock / Data Rate | — | 1066 MHz / 1066 Mbps per data pin |
| Operating Supply Current (IDD) | — | 55 mA |
| Standby Current | — | 2 mA |
| On-Die Termination (ODT) | — | Dynamic ODT supported |
| Data Mask Function | — | Yes |
| Tipe Mounting | — | Surface Mount (BGA) |
| Status RoHS | — | Compliant |