K4B4G1646E-BYK0 vs K4B4G1646E-BCMA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BYK0 sa pamamagitan ng Samsung Electronics at K4B4G1646E-BCMA sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BCMA - 4Gb DDR3 SDRAM 1066MHz FBGA-96 | Samsung
K4B4G1646E-BCMA ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646E-BYK0 | K4B4G1646E-BCMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $3.77 |
| Uri ng Memory | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | 1.425 V to 1.575 V (1.5 V nominal) |
| Rate ng Data | DDR3-1600 (800 MHz) | — |
| Packhaging | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | FBGA-96 (7.5 x 13.3 mm) |
| Temperature na Operasyon | 0°C to +95°C (TC) | 0C to +95C |
| Latensya ng CAS | 11 (CL-tRCD-tRP) | — |
| Burst Length | 8 (fixed), 4 (burst chop) | — |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | Yes |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Clock / Data Rate | — | 1066 MHz / 1066 Mbps per data pin |
| Operating Supply Current (IDD) | — | 55 mA |
| Standby Current | — | 2 mA |
| On-Die Termination (ODT) | — | Dynamic ODT supported |
| Data Mask Function | — | Yes |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| Tindminan RoHS | — | Compliant |