NT5CC256M16CP-DIA vs K4B4G1646E-BYMA Comparison

Detailed side-by-side comparison of NT5CC256M16CP-DIA by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5CC256M16CP-DIA

NT5CC256M16CP-DIA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CP-DIA βœ“ Active
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA βœ“ Active

Specification Comparison

Parameter NT5CC256M16CP-DIA K4B4G1646E-BYMA
Brand Nanya Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.90 $14.32
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4 Gbit (256M x 16) β€”
Data Rate 1600 Mbps (800 MHz clock) 1866 Mbps/pin
Supply Voltage 1.35 V (1.283 V to 1.45 V) 1.35 V (1.28 V to 1.575 V)
Package TFBGA-96 (9 x 13 mm, 0.8 mm pitch) FBGA-96
Number of Banks 8 β€”
CAS Latency (CL) 11, 12, 13 β€”
Write Latency (CWL) 5, 6, 7, 8, 9 β€”
Access Time (tAC) 0.225 ns β€”
Operating Temperature Range -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) β€”
RoHS Compliant Compliant
Halogen Free Yes β€”
Mounting Type Surface Mount Surface Mount
Differential Clock Input Yes (CK, CK#) β€”
On-Die Termination (ODT) Yes β€”
Density β€” 4 Gb
Organization β€” 256M x 16
Clock Frequency β€” 933 MHz
Operating Temperature β€” 0Β°C to +95Β°C
Operating Current β€” 14 mA
Standby Current β€” 2 mA, 3 mA
CAS Latency β€” [DATA_NEEDED: CAS Latency]
Burst Length β€” [DATA_NEEDED: Burst Length]
Number of Pins β€” 96

Datasheets & Resources

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