NT5CC256M16CP-DII vs K4B4G1646E-BYMA Comparison

Detailed side-by-side comparison of NT5CC256M16CP-DII by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5CC256M16CP-DII NT5CC256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CP-DII ✓ Active
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Active

Specification Comparison

Parameter NT5CC256M16CP-DII K4B4G1646E-BYMA
Brand Nanya Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $14.32
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Density 4Gb —
Clock Frequency 800 MHz 933 MHz
Data Rate 1600 Mbps 1866 Mbps/pin
Supply Voltage 1.35 V 1.35 V (1.28 V to 1.575 V)
Temperature Grade Industrial —
Package TFBGA-96 (9x13 mm, 0.8 mm pitch) FBGA-96
Number of Terminals 96 —
Refresh Cycles 8192 —
Access Time 0.225 ns —
Technology CMOS —
RoHS Compliant Compliant
Halogen Free Yes —
Operating Temperature Range -40°C to +95°C —
Density — 4 Gb
Operating Temperature — 0°C to +95°C
Operating Current — 14 mA
Standby Current — 2 mA, 3 mA
Mounting Type — Surface Mount
CAS Latency — [DATA_NEEDED: CAS Latency]
Burst Length — [DATA_NEEDED: Burst Length]
Number of Pins — 96

Datasheets & Resources

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