NT5CC256M16DN-FLNA vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of NT5CC256M16DN-FLNA by Nanya Technology and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DN-FLNA ✓ ActiveSamsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | NT5CC256M16DN-FLNA | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | — |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.283V-1.45V) | — |
| Backward Compatible Voltage | 1.5V ±0.075V | — |
| Data Rate | 1600 Mbps (PC3-12800) | 1333 Mbps |
| CAS Latency | 11 | Programmable |
| Burst Length | 8 | — |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature Range | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) | — |
| Interface | 16-bit I/O | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| RoHS | Compliant | — |
| Supply Voltage | — | 1.35 V |
| Operating Temperature | — | 0 ~ 85 °C |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |