NT5CC256M16DN-FLNA vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of NT5CC256M16DN-FLNA by Nanya Technology and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16DN-FLNA
NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DN-FLNA β ActiveSamsung Electronics
K4B4G1646D-BYH9
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 β ActiveSpecification Comparison
| Parameter | NT5CC256M16DN-FLNA | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.00 | $2.30 |
| Memory Type | DDR3L SDRAM | β |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.283V-1.45V) | β |
| Backward Compatible Voltage | 1.5V Β±0.075V | β |
| Data Rate | 1600 Mbps (PC3-12800) | 1333 Mbps |
| CAS Latency | 11 | Programmable |
| Burst Length | 8 | β |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature Range | Commercial: 0Β°C to +95Β°C (Tcase), Industrial: -40Β°C to +95Β°C (Tcase), Automotive: -40Β°C to +105Β°C (Tcase) | β |
| Interface | 16-bit I/O | β |
| Refresh | Auto-refresh and self-refresh | β |
| On-Die Termination (ODT) | Yes | β |
| DLL | Yes | β |
| RoHS | Compliant | β |
| Supply Voltage | β | 1.35 V |
| Operating Temperature | β | 0 ~ 85 Β°C |
| Number of Banks | β | 8 |
| Write Latency | β | Programmable |
| On-Die Termination | β | Yes |
| Internal Calibration | β | Yes |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| Die Version | β | D-die |