NT5CC256M16DN-FLNA vs K4B4G1646D-BYH9 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DN-FLNA sa pamamagitan ng Nanya Technology at K4B4G1646D-BYH9 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DN-FLNA ✓ NakahandaSamsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16DN-FLNA | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | — |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.283V-1.45V) | — |
| Backward Compatible Voltage | 1.5V ±0.075V | — |
| Rate ng Data | 1600 Mbps (PC3-12800) | 1333 Mbps |
| Latensya ng CAS | 11 | Programmable |
| Burst Length | 8 | — |
| Packhaging | 96-ball FBGA | 96FBGA |
| Hanay ng Temperature na Operasyon | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) | — |
| Interface | 16-bit I/O | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| RoHS | Compliant | — |
| Volte ng Pagbibigay | — | 1.35 V |
| Temperature na Operasyon | — | 0 ~ 85 °C |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |