NT5CC256M16DN-FLNA vs K4B4G1646D-BYH9 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16DN-FLNA disebabkan oleh Nanya Technology dan K4B4G1646D-BYH9 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ AktifPengandingan Spesifikasi
| Parametr | NT5CC256M16DN-FLNA | K4B4G1646D-BYH9 |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | — |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.283V-1.45V) | — |
| Backward Compatible Voltage | 1.5V ±0.075V | — |
| Kadar Data | 1600 Mbps (PC3-12800) | 1333 Mbps |
| Latensi CAS | 11 | Programmable |
| Burst Length | 8 | — |
| Kemasan | 96-ball FBGA | 96FBGA |
| Gambaran Suhu Operasi | Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) | — |
| Antaramuka | 16-bit I/O | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| RoHS | Compliant | — |
| Tegangan Pemberi Arus | — | 1.35 V |
| Suhu Operasi | — | 0 ~ 85 °C |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |