NT5CC256M16DP-FLNA vs K4B4G1646E-BYMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16DP-FLNA disebabkan oleh Nanya Technology dan K4B4G1646E-BYMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CC256M16DP-FLNA | K4B4G1646E-BYMA |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.32 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Total Density | 4 Gb | — |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.28 V to 1.575 V) |
| Kadar Data | 1600 Mbps (PC3L-12800) | 1866 Mbps/pin |
| Latensi CAS | 11, 12, 13 | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Number of Banks | 8 | — |
| Antaramuka | SSTL-15 | — |
| Kemasan | BGA-96 (13x9 mm) | FBGA-96 |
| Suhu Operasi | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh | Auto self-refresh, auto precharge | — |
| Ciri-ciri | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Jenis Pemasangan | — | Surface Mount |
| Bilangan Pin | — | 96 |