NT5CC256M16DP-FLNA vs K4B4G1646E-BYMA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DP-FLNA sa pamamagitan ng Nanya Technology at K4B4G1646E-BYMA sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16DP-FLNA ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | NT5CC256M16DP-FLNA | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $14.32 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Organisasyon | 256M x 16 | 256M x 16 |
| Total Density | 4 Gb | — |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.28 V to 1.575 V) |
| Rate ng Data | 1600 Mbps (PC3L-12800) | 1866 Mbps/pin |
| Latensya ng CAS | 11, 12, 13 | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Number of Banks | 8 | — |
| Interface | SSTL-15 | — |
| Packhaging | BGA-96 (13x9 mm) | FBGA-96 |
| Temperature na Operasyon | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh | Auto self-refresh, auto precharge | — |
| Mga Karakteristika | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset | — |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Uri ng Pagpapasok | — | Surface Mount |
| Bilang ng Pins | — | 96 |