STP20NF20L vs IRF640NPBF Comparison

Detailed side-by-side comparison of STP20NF20L by STMicroelectronics and IRF640NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STP20NF20L STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L ✓ Active

Specification Comparison

Parameter STP20NF20L IRF640NPBF
Brand STMicroelectronics Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.88
FET Type N-Channel —
Technology STripFET™ (planar silicon gate) HEXFET (5th Generation)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) 18 A (Tc) —
On-Resistance (RDS(on)) 0.10 Ω (max) —
Power Dissipation (PD) 110 W (Tc) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge (Qg) Low gate charge (STripFET™ optimized) —
Input Capacitance (Ciss) Minimized by STripFET™ process —
Package TO-220 (through-hole, 3-lead) TO-220AB (through-hole, 3-pin)
Mounting Type Through Hole Through Hole
Operating Temperature Range [DATA_NEEDED: TJ min/max] —
RoHS Status Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Process Technology STripFET™ (low Qg, low Ciss) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc — 18 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 150 mOhm max at VGS = 10 V
Power Dissipation (PD) at Tc=25C — 150 W
Total Gate Charge (Qg) — 44.7 nC
Operating Junction Temperature — -55C to +150C
Transistor Type — N-Channel Enhancement Mode
Avalanche Energy Rated — Yes
dv/dt Rating — Dynamic, rated
Manufacturer — Infineon (formerly International Rectifier)

Datasheets & Resources

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