STP20NF20L vs IRF640NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STP20NF20L disebabkan oleh STMicroelectronics dan IRF640NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

STMicroelectronics
STP20NF20L STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L ✓ Aktif

Pengandingan Spesifikasi

Parametr STP20NF20L IRF640NPBF
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology STripFET™ (planar silicon gate) HEXFET (5th Generation)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) 18 A (Tc) —
On-Resistance (RDS(on)) 0.10 Ω (max) —
Power Dissipation (PD) 110 W (Tc) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge (Qg) Low gate charge (STripFET™ optimized) —
Input Capacitance (Ciss) Minimized by STripFET™ process —
Kemasan TO-220 (through-hole, 3-lead) TO-220AB (through-hole, 3-pin)
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi [DATA_NEEDED: TJ min/max] —
Status RoHS Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Process Technology STripFET™ (low Qg, low Ciss) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc — 18 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 150 mOhm max at VGS = 10 V
Power Dissipation (PD) at Tc=25C — 150 W
Total Gate Charge (Qg) — 44.7 nC
Suhu Hubungan Operasi — -55C to +150C
Jenis Transistor — N-Channel Enhancement Mode
Avalanche Energy Rated — Yes
dv/dt Rating — Dynamic, rated
Manufacturer — Infineon (formerly International Rectifier)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga