STP20NF20L vs IRF640NPBF Perbandingan
Perbandingan bersamaan detil STP20NF20L dari STMicroelectronics dan IRF640NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
STMicroelectronics
STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics
STP20NF20L ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | STP20NF20L | IRF640NPBF |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | STripFET™ (planar silicon gate) | HEXFET (5th Generation) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) | 18 A (Tc) | — |
| On-Resistance (RDS(on)) | 0.10 Ω (max) | — |
| Power Dissipation (PD) | 110 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge (Qg) | Low gate charge (STripFET™ optimized) | — |
| Input Capacitance (Ciss) | Minimized by STripFET™ process | — |
| Paket | TO-220 (through-hole, 3-lead) | TO-220AB (through-hole, 3-pin) |
| Tipe Mounting | Through Hole | Through Hole |
| Rentang Suhu Kerja | [DATA_NEEDED: TJ min/max] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| Process Technology | STripFET™ (low Qg, low Ciss) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Total Gate Charge (Qg) | — | 44.7 nC |
| Suhu Hubung Kerja | — | -55C to +150C |
| Tipe Transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Manufacturer | — | Infineon (formerly International Rectifier) |