TBD62503AFNG vs ULN2003ADR Comparison
Detailed side-by-side comparison of TBD62503AFNG by Toshiba and ULN2003ADR by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | TBD62503AFNG | ULN2003ADR |
|---|---|---|
| Brand | Toshiba | Texas Instruments |
| Category | Power MOSFET Drivers | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.16 |
| Number of Channels | 7 | 7 |
| Channel Type | Sink-type (low-side switch) | — |
| Output Device | N-channel DMOS open-drain | — |
| Maximum Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Output Current (per channel) | 300 mA | — |
| Peak Output Current | 500 mA | — |
| Maximum Clamping Diode Voltage | 50 V | — |
| Logic Input Compatibility | 3V CMOS / TTL | — |
| On-Resistance (Ron) | [DATA_NEEDED: typical Ron at specified Vgs] | — |
| Input Voltage (Vin) | 0 V to 30 V (gate drive, low-voltage logic supply) | — |
| Operating Temperature Range | -40 C to +85 C | -40 C to +70 C |
| Package | SSOP-16 | SOIC-16 (D) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| Process Technology | Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic | — |
| Transistor Type | — | 7 NPN Darlington Array |
| Collector Current (Single Output, Max) | — | 500 mA |
| Collector-Emitter Voltage (Max) | — | 50 V |
| Output Breakdown Voltage (Min) | — | 50 V |
| Input Type | — | Logic-level compatible (TTL/CMOS) |
| Series Base Resistor | — | 2.7 kOhm |
| Output Configuration | — | Open-collector, common emitter |
| Clamp Diodes | — | Integrated common-cathode flyback diodes |
| DC Input Voltage (Min) | — | [DATA_NEEDED: minimum input logic-high voltage] |
| Lead-Free | — | Yes |