TBD62503AFNG vs ULN2003ADR 比較
詳細並排比較 TBD62503AFNG 由 Toshiba 與 ULN2003ADR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | TBD62503AFNG | ULN2003ADR |
|---|---|---|
| 品牌 | Toshiba | Texas Instruments |
| 類別 | Power MOSFET Drivers | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Number of Channels | 7 | 7 |
| Channel Type | Sink-type (low-side switch) | — |
| Output Device | N-channel DMOS open-drain | — |
| Maximum Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Output Current (per channel) | 300 mA | — |
| Peak Output Current | 500 mA | — |
| Maximum Clamping Diode Voltage | 50 V | — |
| Logic Input Compatibility | 3V CMOS / TTL | — |
| On-Resistance (Ron) | [DATA_NEEDED: typical Ron at specified Vgs] | — |
| Input Voltage (Vin) | 0 V to 30 V (gate drive, low-voltage logic supply) | — |
| 工作溫度範圍 | -40 C to +85 C | -40 C to +70 C |
| 封裝 | SSOP-16 | SOIC-16 (D) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS 狀態 | Compliant (per distributor listings) | Compliant |
| Process Technology | Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic | — |
| 電晶體類型 | — | 7 NPN Darlington Array |
| Collector Current (Single Output, Max) | — | 500 mA |
| Collector-Emitter Voltage (Max) | — | 50 V |
| Output Breakdown Voltage (Min) | — | 50 V |
| Input Type | — | Logic-level compatible (TTL/CMOS) |
| Series Base Resistor | — | 2.7 kOhm |
| 輸出配置 | — | Open-collector, common emitter |
| Clamp Diodes | — | Integrated common-cathode flyback diodes |
| DC Input Voltage (Min) | — | [DATA_NEEDED: minimum input logic-high voltage] |
| Lead-Free | — | Yes |