TBD62503AFNG vs ULN2003ADR Vergleich
Detaillierter Direktvergleich von TBD62503AFNG von Toshiba und ULN2003ADR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | TBD62503AFNG | ULN2003ADR |
|---|---|---|
| Marke | Toshiba | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,16 |
| Number of Channels | 7 | 7 |
| Channel Type | Sink-type (low-side switch) | — |
| Output Device | N-channel DMOS open-drain | — |
| Maximum Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Output Current (per channel) | 300 mA | — |
| Peak Output Current | 500 mA | — |
| Maximum Clamping Diode Voltage | 50 V | — |
| Logic Input Compatibility | 3V CMOS / TTL | — |
| On-Resistance (Ron) | [DATA_NEEDED: typical Ron at specified Vgs] | — |
| Input Voltage (Vin) | 0 V to 30 V (gate drive, low-voltage logic supply) | — |
| Betriebstemperaturbereich | -40 C to +85 C | -40 C to +70 C |
| Gehäuse | SSOP-16 | SOIC-16 (D) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS-Status | Compliant (per distributor listings) | Compliant |
| Process Technology | Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic | — |
| Transistortyp | — | 7 NPN Darlington Array |
| Collector Current (Single Output, Max) | — | 500 mA |
| Collector-Emitter Voltage (Max) | — | 50 V |
| Output Breakdown Voltage (Min) | — | 50 V |
| Input Type | — | Logic-level compatible (TTL/CMOS) |
| Series Base Resistor | — | 2.7 kOhm |
| Ausgangskonfiguration | — | Open-collector, common emitter |
| Clamp Diodes | — | Integrated common-cathode flyback diodes |
| DC Input Voltage (Min) | — | [DATA_NEEDED: minimum input logic-high voltage] |
| Lead-Free | — | Yes |