TBD62503AFNG vs ULN2003ADR Perbandingan
Perbandingan bersamaan detil TBD62503AFNG dari Toshiba dan ULN2003ADR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | TBD62503AFNG | ULN2003ADR |
|---|---|---|
| Merek | Toshiba | Texas Instruments |
| Kategori | Power MOSFET Drivers | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Number of Channels | 7 | 7 |
| Channel Type | Sink-type (low-side switch) | — |
| Output Device | N-channel DMOS open-drain | — |
| Maximum Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Output Current (per channel) | 300 mA | — |
| Peak Output Current | 500 mA | — |
| Maximum Clamping Diode Voltage | 50 V | — |
| Logic Input Compatibility | 3V CMOS / TTL | — |
| On-Resistance (Ron) | [DATA_NEEDED: typical Ron at specified Vgs] | — |
| Input Voltage (Vin) | 0 V to 30 V (gate drive, low-voltage logic supply) | — |
| Rentang Suhu Kerja | -40 C to +85 C | -40 C to +70 C |
| Paket | SSOP-16 | SOIC-16 (D) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Status RoHS | Compliant (per distributor listings) | Compliant |
| Process Technology | Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic | — |
| Tipe Transistor | — | 7 NPN Darlington Array |
| Collector Current (Single Output, Max) | — | 500 mA |
| Collector-Emitter Voltage (Max) | — | 50 V |
| Output Breakdown Voltage (Min) | — | 50 V |
| Input Type | — | Logic-level compatible (TTL/CMOS) |
| Series Base Resistor | — | 2.7 kOhm |
| Konfigurasi Output | — | Open-collector, common emitter |
| Clamp Diodes | — | Integrated common-cathode flyback diodes |
| DC Input Voltage (Min) | — | [DATA_NEEDED: minimum input logic-high voltage] |
| Lead-Free | — | Yes |