TBD62503AFNG vs ULN2003ADR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci TBD62503AFNG disebabkan oleh Toshiba dan ULN2003ADR disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | TBD62503AFNG | ULN2003ADR |
|---|---|---|
| Merek | Toshiba | Texas Instruments |
| Kategori | Power MOSFET Drivers | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Number of Channels | 7 | 7 |
| Channel Type | Sink-type (low-side switch) | — |
| Output Device | N-channel DMOS open-drain | — |
| Maximum Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Output Current (per channel) | 300 mA | — |
| Peak Output Current | 500 mA | — |
| Maximum Clamping Diode Voltage | 50 V | — |
| Logic Input Compatibility | 3V CMOS / TTL | — |
| On-Resistance (Ron) | [DATA_NEEDED: typical Ron at specified Vgs] | — |
| Input Voltage (Vin) | 0 V to 30 V (gate drive, low-voltage logic supply) | — |
| Gambaran Suhu Operasi | -40 C to +85 C | -40 C to +70 C |
| Kemasan | SSOP-16 | SOIC-16 (D) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Status RoHS | Compliant (per distributor listings) | Compliant |
| Process Technology | Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic | — |
| Jenis Transistor | — | 7 NPN Darlington Array |
| Collector Current (Single Output, Max) | — | 500 mA |
| Collector-Emitter Voltage (Max) | — | 50 V |
| Output Breakdown Voltage (Min) | — | 50 V |
| Input Type | — | Logic-level compatible (TTL/CMOS) |
| Series Base Resistor | — | 2.7 kOhm |
| Konfigurasi Output | — | Open-collector, common emitter |
| Clamp Diodes | — | Integrated common-cathode flyback diodes |
| DC Input Voltage (Min) | — | [DATA_NEEDED: minimum input logic-high voltage] |
| Lead-Free | — | Yes |