BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
Teilenummer: BSC019N04NSGATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.91 | $0,91 |
| 10 | $0.82 | $8,20 |
| 100 | $0.74 | $74,00 |
| 500 | $0.66 | $330,00 |
| 1.000 | $0.58 | $580,00 |
BSC019N04NSGATMA1 Übersicht
An N-channel power MOSFET is a voltage-controlled three-terminal semiconductor switch in which the drain-source channel conducts electrons when a positive gate-source voltage is applied above the threshold. MOSFETs occupy a key place in the discrete-semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. The 'N-channel' designation means majority carriers are electrons, yielding lower on-resistance and faster switching than equivalent P-channel parts. OptiMOS is Infineon's brand name for its 30V-300V trench power-MOSFET families, used in synchronous rectification, DC-DC conversion, and hot-swap circuits.
Key features of the BSC019N04NSGATMA1 include 1.9 mΩ typical RDS(on) at VGS = 10 V, 100 A continuous ID at TC = 25 °C, and a 40 V drain-source breakdown voltage suitable for 12 V and 24 V bus systems. The PG-TDSON-8-1 package features a large exposed drain pad that doubles as the electrical drain terminal and a thermal pathway, with RθJA in the 50 °C/W range for properly laid-out boards. Gate charge is optimized for high-frequency switching, typically under 100 nC total Qg, enabling compact, high-efficiency synchronous buck and buck-boost converters.
The part is particularly suited for OR-ing, hot-swap, and e-fuse roles on 12 V telecom and server rails where low conduction loss dominates thermal budget. Its 40 V rating also gives ample headroom for 19 V notebook adapters and 24 V industrial supplies. In synchronous rectification it replaces Schottky diodes in point-of-load converters above 30 A, cutting rectifier losses by roughly half. Designers should bias the gate at 10 V for lowest RDS(on) and derate to 6 V or 4.5 V curves when logic-level compatibility is required.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS family and approved cross-brand equivalents, and practical PCB/thermal design notes not found in the bare datasheet.
Drop-in-Alternativen für BSC019N04NSGATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSC019N04NSGATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at Ta, MSL Level.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSC014N04LSIATMA1
✅ Drop-In✓ Auf Lager
$0.39 / Stück
Datenblatt ansehen →BSC014N04LSATMA1
✅ Drop-In✓ Auf Lager
$0.74 / Stück
Datenblatt ansehen →BSC022N04LS6ATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.66 / Stück
Datenblatt ansehen →BSC0906NSATMA1
✅ Drop-In✓ Auf Lager
$0.48 / Stück
Datenblatt ansehen →BSC0902NSIATMA1
✅ Drop-In✓ Auf Lager
$0.32 / Stück
Datenblatt ansehen →BSC0901NSATMA1
✅ Drop-In✓ Auf Lager
$0.78 / Stück
Datenblatt ansehen →BSC019N04NSGATMA1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel MOSFET |
| Technology | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Continuous Drain Current (ID) at TA=25C | 30 A |
| RDS(on) max at VGS=10V | 2.5 mΩ |
| RDS(on) typ at VGS=10V | 1.9 mΩ |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Power Dissipation (PD) at TC=25C | 125 W |
| Betriebstemperaturbereich | -55C to +150C |
| Gehäuse | PG-TDSON-8-1 (TDSON-8 FL) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
BSC019N04NSGATMA1 Pin-Konfiguration
| Pin 1 | Source — Source terminal (connected to exposed pad via lead frame) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin PAD | Drain — Drain terminal (exposed thermal pad on underside) |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
BSC019N04NSGATMA1 ist geeignet für 6 Anwendungs: 12V Hot-Swap and E-Fuse, Synchronous Rectification in DC-DC Converters, OR-ing Diode Replacement in Redundant Power, Battery Protection and Load Switch in Power Tools, Motor Drive and H-Bridge (Low-Side Switch), Automotive 12V Load Switching.
12V Hot-Swap and E-Fuse
The BSC019N04NSGATMA1's 1.9 mΩ typical RDS(on) and 40 V VDS rating make it an ideal pass-element for 12 V hot-swap controllers in server backplanes and telecom equipment. With 100 A continuous ID at TC=25C, it can sustain steady-state loads of 60-80 A on a properly laid-out 4-layer PCB without exceeding thermal limits. The exposed drain pad provides a low thermal-impedance path (~50 °C/W on 1 oz copper) for inrush energy dissipation during hot-insertion events.
Empfohlen
Synchronous Rectification in DC-DC Converters
Used as the low-side synchronous FET in 12 V-input buck converters above 30 A, the BSC019N04NSGATMA1 replaces Schottky diodes and roughly halves rectification loss because its 1.9 mΩ RDS(on) at VGS=10V produces less voltage drop than a 30 A Schottky at typical operating currents. The 40 V rating gives ample margin above 12 V plus transients, and the OptiMOS gate charge is tuned for sub-100 nC total Qg, enabling 300-500 kHz switching frequencies in point-of-load converters.
Empfohlen
OR-ing Diode Replacement in Redundant Power
In redundant 12 V server and telecom power architectures, the BSC019N04NSGATMA1 replaces Schottky OR-ing diodes with a MOSFET that drops only ~190 mV at 100 A versus ~500 mV for a Schottky. This eliminates several watts of dissipation per feed and removes heatsinks. The part's 100 A continuous rating easily handles N+1 redundant load currents of 40-60 A per feed. Its low gate charge enables fast disconnect during fault events when driven by a dedicated OR-ing controller.
Empfohlen
Battery Protection and Load Switch in Power Tools
Cordless power tools running on 18-20 V battery packs (10S Li-ion nominal 36 V max) require low-loss disconnect switches, and the BSC019N04NSGATMA1's 1.9 mΩ RDS(on) at VGS=10V provides the lowest conduction loss in its class. At 30 A continuous drain current on a 1 oz copper board, the part can handle peak motor currents of 80-100 A for short bursts. The PG-TDSON-8-1 package withstands the mechanical vibration typical of handheld tools when the drain pad is properly soldered to the board.
Empfohlen
Motor Drive and H-Bridge (Low-Side Switch)
In 24 V brushed-DC motor H-bridges, the BSC019N04NSGATMA1 serves as the low-side switch, leveraging its 40 V VDS and 1.9 mΩ RDS(on) to minimize conduction loss during PWM operation. The 125 W power dissipation at TC=25C supports continuous currents up to 30 A on a small heatsink. The low gate charge permits 20-50 kHz PWM frequencies for smooth torque control without excessive switching loss.
Empfohlen
Automotive 12V Load Switching
Automotive 12 V body controllers and ECU outputs need robust, low-loss switches. The BSC019N04NSGATMA1's 40 V VDS accommodates 12 V crank and load-dump transients up to ~35 V, and its 1.9 mΩ RDS(on) minimizes thermal rise when driving lamps, solenoids, or motor loads. Although not AEC-Q101 qualified, it is widely used in non-safety automotive applications; for AEC-Q101 drop-in parts see Infineon's automotive-grade OptiMOS siblings in the same PG-TDSON-8-1 footprint.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSC019N04NSGATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSC014N04LSIATMA1 | BSC014N04LSATMA1 | BSC0906NSATMA1 | BSC022N04LS6ATMA1 | BSC0902NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 60 V | 40 V | 60 V |
| RDS(on) typ at VGS=10V | 1.9 mΩ | 1.4 mΩ | 1.4 mΩ | ~9 mΩ | 2.2 mΩ | ~10 mΩ |
| Power Dissipation (TC=25C) | 125 W | 125 W | 125 W | 125 W | 125 W | 125 W |
| Operating Temperature Range | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
| Unit Price (qty 1, USD) | 0.91 | 1.05 | 1.05 | 0.95 | 0.78 | 0.85 |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Lowest RDS(on) in 40V OptiMOS family (vs. BSC022N04LS6ATMA1)
- 40 V rating suits 12 V / 19 V applications with adequate transient margin (vs. BSC0906NSATMA1)
- Pin-compatible upgrade path within same family (vs. BSC014N04LSIATMA1)
Designhinweise
Estimated: at ID = 60 A continuous and RDS(on) = 2.5 mΩ max, the BSC019N04NSGATMA1 dissipates roughly 9 W (60² × 0.0025). With a 4-layer PCB and 1 sq-inch copper pour under the exposed pad, RθJA is approximately 50 °C/W, yielding a junction temperature rise of 70 °C above ambient. For full 100 A operation, mount the device to a heatsink or use at least 4 sq-inch of 2 oz copper on top and bottom layers.
The PG-TDSON-8-1 package's exposed pad is the primary drain connection AND the dominant thermal path. Use at least 8 thermal vias (0.3 mm drill, 1 oz copper plating) directly under the pad connecting top, inner, and bottom copper layers. Inadequate via count is the single most common cause of thermal failure in PG-TDSON designs, typically raising RθJA by 30-50% versus a properly via-stitched layout.
Do not drive the gate above the absolute maximum VGS of ±20 V - typical gate-source failure occurs at 25 V due to oxide rupture. Use a gate-source Zener (15-18 V) for protection if the gate driver can overshoot. Also, never operate in linear mode for sustained periods - the SOA curve drops to ~3 A at 40 V VDS, so PWM switching only. For inrush limiting, ramp VGS with an RC network to stay within SOA.
Keep the gate-drive loop (gate-driver output -> gate -> source -> gate-driver ground return) area under 1 sq-cm to minimize parasitic inductance and prevent oscillations. Place a 10 Ω gate resistor within 5 mm of the gate pin to damp ringing. The high-current source loop (drain -> load -> source -> input cap) should be a wide, short copper pour, ideally on the top layer to minimize stray inductance that would otherwise create VDS overshoot during turn-off.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, refer to Infineon automotive-grade OptiMOS siblings. Lead-free and halogen-free reflow-compatible per JEDEC J-STD-020.
