IRS2104STRPBF vs IR2117STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRS2104STRPBF disebabkan oleh Infineon dan IR2117STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRS2104STRPBF IR2117STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Tetstruktur Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 150 ns —
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL —
Suhu Hubungan Operasi -40C to +150C —
Kemasan 8-Lead SOIC (SOIC-8) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 2 (1 year floor life per datasheet) MSL3 (per JEDEC J-STD-020)
Qualification Level Industrial —
Status RoHS Compliant (PbF suffix) Compliant
Configuration — High-Side Single Channel
Fungsi — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
Bilangan Output — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
Masa Pertambahan — 80 ns (typ)
Masa jatuh — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Negative Transient Voltage Tolerance — Yes, dV/dt immune
Gambaran Suhu Operasi — -40 C to +125 C
Kemasan / Case — 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free — Yes

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