IRS2104STRPBF vs IR2117STRPBF Perbandingan

Perbandingan bersamaan detil IRS2104STRPBF dari Infineon dan IR2117STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2104STRPBF IR2117STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Topologi Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 150 ns —
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL —
Suhu Hubung Kerja -40C to +150C —
Paket 8-Lead SOIC (SOIC-8) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 2 (1 year floor life per datasheet) MSL3 (per JEDEC J-STD-020)
Qualification Level Industrial —
Status RoHS Compliant (PbF suffix) Compliant
Configuration — High-Side Single Channel
Fungsi — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
Jumlah Output — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
Waktu naik — 80 ns (typ)
Waktu Menurun — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Negative Transient Voltage Tolerance — Yes, dV/dt immune
Rentang Suhu Kerja — -40 C to +125 C
Paket / Case — 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free — Yes

Spek dan Sumber

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