H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix
N.º de pieza: H5AN4G8NBJR-UHI ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.95 | $29,50 |
| 100 | $2.7 | $270,00 |
| 500 | $2.45 | $1.225,00 |
| 1.000 | $2.25 | $2.250,00 |
H5AN4G8NBJR-UHI Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family and a cornerstone of modern power management ICs and memory subsystems. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles bank groups to enable higher bandwidth, and adds features such as bank group architecture, DBI (data bus inversion), and CA parity, making it the mainstream main-memory technology for embedded and industrial platforms between DDR3 and DDR5.
Key features of the H5AN4G8NBJR-UHI include its large 4Gb density in a single x8 die, DDR4-2400 data-rate operation (PC4-19200), and the 1.2 V low-voltage core that reduces system power versus DDR3 solutions. The x8 organization simplifies controller design and supports single-bit-error correction schemes such as chipkill-style ECC at board level. According to the SK hynix H5AN4GxNBJR series datasheet, the family is ideally suited for main-memory applications requiring large density and high bandwidth.
Technically, the device implements the JEDEC DDR4 SDRAM interface with bank-group parallelism, on-die termination (ODT), and programmable CAS latency, supporting burst lengths of 8 and sequential/interleave access modes. Power-down and self-refresh modes reduce standby consumption, which is valuable in industrial systems with constrained thermal budgets.
Typical applications include industrial-control main memory, networking equipment line-card buffering, embedded compute modules (COM Express, SMARC), and test-and-measurement systems that require DDR4-2400 bandwidth at industrial temperature ranges. The -UHI industrial grade differentiates it from consumer -UHC parts rated for narrower ambient conditions.
Design consideration: DDR4-2400 routing requires careful length matching of data groups, controlled-impedance stackups, and accurate VTT termination; follow the SK hynix system design guide and controller layout rules for fly-by command/address topology.
This page synthesizes distributor sourcing data, same-footprint drop-in alternatives from SK hynix, Micron, and Samsung, and practical DDR4 design notes not found in the manufacturer datasheet alone.
Alternativas directas para H5AN4G8NBJR-UHI — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con H5AN4G8NBJR-UHI (mismo factor de forma y huella) — difiere en Package, Data Rate, Interface, RoHS Status, Refresh.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
H5AN4G8NBJR-UHC
✅ Sustitución directa✓ En stock
$3.18 / unidad
Ver hoja de datos →H5AN4G8NBJR-RDC
✅ Sustitución directa✓ En stock
$2.95 / unidad
Ver hoja de datos →H5AN4G8NBJR-PBC
✅ Sustitución directa✓ En stock
$2.2 / unidad
Ver hoja de datos →MT40A512M8RH-083E
✅ Sustitución directa✓ En stock
$3.3 / unidad
Ver hoja de datos →K4A8G085WC-BCWE
✅ Sustitución directa✓ En stock
$7.3828 / unidad
Ver hoja de datos →K4A8G085WB-BCWE
✅ Sustitución directa✓ En stock
$12.3047 / unidad
Ver hoja de datos →H5AN4G8NBJR-UHI Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 4 Gbit |
| Organización de memoria | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | 1.2 V |
| Encapsulado | FBGA-78 (78-ball fine-pitch BGA) |
| Tipo de montaje | Surface Mount |
| Grade | Industrial (-UHI suffix) |
| Velocidad de datos | 2400 MT/s |
| Interfaz | JEDEC DDR4 SDRAM |
| Bank Architecture | DDR4 bank group architecture |
| Refresh | Self-refresh and auto-refresh support |
| Termination | On-die termination (ODT) |
Guía de configuración de pines de H5AN4G8NBJR-UHI fbga-78 (78-ball fine-pitch bga)
Configuración de pines para H5AN4G8NBJR-UHI (encapsulado fbga-78 (78-ball fine-pitch bga)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para H5AN4G8NBJR-UHI.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
H5AN4G8NBJR-UHI es adecuado para 6 aplicacións: Industrial Control Main Memory, Networking Equipment Buffer Memory, Embedded Compute Modules (COM Express / SMARC), Test and Measurement Instrumentation, Surveillance and Vision Systems, Automotive-Adjacent and Rugged Embedded Systems.
Industrial Control Main Memory
The H5AN4G8NBJR-UHI is purpose-built for industrial-control main memory because the -UHI industrial temperature grade withstands the wide ambient conditions found in factory automation cabinets, motor-control enclosures, and PLC platforms. Its 4Gb 512M x 8 organization provides ample buffer space for real-time control data at DDR4-2400 bandwidth (PC4-19200 class), while the 1.2 V rail keeps memory-subsystem power low enough for passively cooled industrial systems. Deployed as discrete DRAM on a CPU or SoC board with fly-by address routing and on-die termination, it delivers deterministic bandwidth for motion profiles and logging workloads. Self-refresh mode preserves state through low-power standby, and the FBGA-78 footprint enables second-sourcing with Micron or Samsung equivalents without PCB rework.
Recomendado
Networking Equipment Buffer Memory
Line cards, switches, and routers rely on large, fast DRAM pools for packet buffering, queue management, and table lookups, and the H5AN4G8NBJR-UHI fits this role with DDR4-2400 data-rate operation and a 4Gb density in a single x8 die. The x8 organization allows granular ECC strategies at the controller level, important for long-duty-cycle networking hardware where uncorrected bit errors degrade uptime. The 1.2 V supply and DDR4 power-down modes reduce per-port power, a critical metric in high-port-count equipment. Because the FBGA-78 package is the industry-standard DDR4 footprint, network OEMs can dual-source with SK hynix suffix variants or Micron MT40A512M8RH-083E to mitigate allocation risk, an increasingly common practice in telecom supply chains.
Recomendado
Embedded Compute Modules (COM Express / SMARC)
Computer-on-module carriers for COM Express and SMARC standards frequently specify discrete DDR4 components soldered directly on the module, and the H5AN4G8NBJR-UHI provides 4Gb of DDR4-2400 bandwidth per chip with the industrial reliability the -UHI grade implies. Four x8 devices aggregate into a 64-bit bus with 8 GB of memory, matching typical embedded CPU memory controllers, while 1.2 V operation keeps module thermal design feasible in fanless enclosures. The FBGA-78 land pattern is shared across SK hynix, Micron, and Samsung x8 DDR4 parts, letting module vendors qualify multiple sources on one PCB. Self-refresh supports memory retention across S3/suspend states, and DDR4 ODT simplifies signal integrity on high-layer-count module stackups.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained bandwidth, and the H5AN4G8NBJR-UHI supplies 4Gb per device at DDR4-2400, enabling multi-gigabyte acquisition buffers in benchtop instruments. The x8 organization supports straightforward 72-bit ECC memory controllers (64 data plus 8 check devices), preserving measurement integrity during long captures. The industrial -UHI grade tolerates instrument-internal temperature rise above ambient, which is common in densely packed acquisition hardware. Its 1.2 V supply eases power-supply design in instruments already constrained by analog rail noise concerns, and the standard FBGA-78 footprint allows vendors to swap in Samsung K4A8G085WC-BCWE or Micron equivalents during component shortages without redesign.
Recomendado
Surveillance and Vision Systems
Network video recorders and smart-camera platforms stream multiple high-resolution video channels through DRAM before write-out to storage, making 4Gb DDR4 components like the H5AN4G8NBJR-UHI a natural fit. The DDR4-2400 data rate sustains the multi-stream aggregate bandwidth of 4K camera pipelines, while 512M x 8 organization supports ECC-protected buffering that prevents visual artifacts from sporadic bit errors in always-on recording systems. The industrial -UHI grade suits outdoor NVR enclosures subject to wide temperature swings, and the 1.2 V rail helps keep passively cooled surveillance hardware within its thermal budget. Using the standard FBGA-78 footprint, security OEMs can alternate between SK hynix, Micron MT40A512M8RH-083E, and Samsung parts to stabilize supply across project volumes.
Recomendado
Automotive-Adjacent and Rugged Embedded Systems
Rugged embedded controllers used in telematics gateways, off-highway equipment, and transport infrastructure require memory that survives vibration, thermal cycling, and wide ambient ranges; the FBGA-78 solder-ball mounting of the H5AN4G8NBJR-UHI plus its industrial -UHI grade address these mechanical and thermal demands. The 4Gb density supports map caching, protocol stacks, and data logging at DDR4-2400 bandwidth, while bank-group architecture keeps effective throughput high under the mixed read/write patterns typical of gateway workloads. At 1.2 V, the DRAM contributes minimally to the power budget of battery-backed and ignition-switched systems. The shared DDR4 footprint enables dual-sourcing with Micron and Samsung x8 parts, protecting long-lifecycle rugged programs from single-vendor allocation.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para H5AN4G8NBJR-UHI — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | H5AN4G8NBJR-UHC | H5AN4G8NBJR-RDC | MT40A512M8RH-083E | K4A8G085WC-BCWE |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Sourcing Model | RFQ / distributor quote | RFQ / broker stock | RFQ | Franchise distributor | Franchise distributor |
Diferenciadores clave
- Industrial temperature grade (frente a H5AN4G8NBJR-UHC)
- Standard footprint with broad cross-brand second sourcing (frente a MT40A512M8RH-083E)
- Speed-bin flexibility within the same die (frente a H5AN4G8NBJR-PBC)
Notas de diseño
DDR4-2400 routing requires length matching within the controller specification, typically tight matching of DQ/DM/DQS per byte lane and looser but bounded skew on address/command for the fly-by topology. Use on-die termination (ODT) settings from the SK hynix datasheet and write-leveling to close timing at 2400 MT/s. Keep data groups on inner layers with solid reference planes, and avoid splitting the DQ reference plane under escape routing. Validate with eye-diagram tests on the DQS strobe before production sign-off.
Provide three rails: 1.2 V VDD, approximately 2.5 V VPP, and VTT at VDD/2 with a termination regulator capable of sinking and sourcing current. Estimated: a single x8 DDR4 device draws on the order of hundreds of milliwatts at DDR4-2400, so a 4-device 32-bit bus plus VTT needs a multi-amp rail design; size the VTT LDO or switcher with a bulk capacitance of at least 100 uF plus local 0.1 uF ceramics per ball-cluster. Follow the controller vendor power tree, e.g., TI or Renesas DDR power reference designs.
Do not assume speed-grade interchange without controller validation: swapping the -UHI (DDR4-2400) for a slower -PBC suffix can fail boot at programmed CAS latency, while faster bins like Micron MT40A512M8RH-083E (DDR4-2666) generally down-clock safely but must still pass memory training. Also, -UHC commercial-grade parts must not replace -UHI in industrial thermal environments even though they are die-identical. Always re-run memory training and margining after any suffix or brand substitution.
FBGA-78 escape routing uses via-in-pad or dog-bone fan-out; prefer 0.8 mm pitch-compatible via-in-pad with filled vias for signal integrity at 2400 MT/s. Reserve the layer stack for a minimum of one dedicated ground reference under each data group. Add thermal relief consistent with JEDEC-style solder-ball reflow profiles for BGA packages, and define the footprint land pattern per the manufacturer package drawing rather than copying from another vendor to avoid ball-map mismatch on second sources.
Información de cumplimiento
Compliance status not stated in sourced web data. Obtain the official SK hynix environmental report for the H5AN4G8NBJR family for RoHS/REACH/halogen-free confirmation.
